SI2315BDS vishay siliconix new product document number: 72014 s-21786?rev. a, 07-oct-02 www.vishay.com 1 p-channel 1.25-w, 1.8-v (g-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.050 @ v gs = -4.5 v - 3.2 -12 0.065 @ v gs = -2.5 v - 2.8 0.100 @ v gs = -1.8 v - 2.6 g s d top view 2 3 to-236 (sot-23) 1 SI2315BDS *(m5) *marking code absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 sec steady state unit drain-source voltage v ds -20 gate-source voltage v gs 8 v t a = 25 c - 3.2 -2.8 continuous drain current (t j = 150 c) a t a = 70 c i d -2.4 -2.1 pulsed drain current a i dm -12 a continuous source current (diode conduction) a i s -0.65 -0.45 t a = 25 c 0.77 0.57 power dissipation a t a = 70 c p d 0.42 0.31 w operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 5 sec. 115 140 maximum junction-to-ambient a steady state r thja 140 175 c/w maximum junction-to-foot (drain) steady state r thjf 60 75 notes a. surface mounted on fr4 board. b. t 5 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI2315BDS vishay siliconix new product www.vishay.com 2 document number: 72014 s-21786 ? rev. a, 07-oct-02 specifications (t j = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = -10 a -12 gate-threshold voltage v gs(th) v ds = v gs , i d = -250 a -0.45 -0.90 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -9.6 v, v gs = 0 v -1 zero gate voltage drain current i dss v ds = -9.6 v, v gs = 0 v, t j = 55 c -10 a v ds -5 v, v gs = -4.5 v -6 on-state drain current a i d(on) v ds -5 v, v gs = -2.5 v -3 a v gs = -4.5 v, i d = -3.2 a 0.040 0.050 drain-source on-resistance a r ds(on) v gs = -2.5 v, i d = -2.8 a 0.050 0.065 v gs = -1.8 v, i d = -2.6 a 0.071 0.100 forward transconductance a g fs v ds = -5 v, i d = -3.2 a 7 s diode forward voltage v sd i s = -1.6 a, v gs = 0 v -1.2 v dynamic b total gate charge q g 8 15 gate-source charge q gs v ds = -6 v, v gs = -4.5 v i d -3.2 a 1.1 nc gate-drain charge q gd i d -3.2 a 2.3 input capacitance c iss 715 output capacitance c oss v ds = -6 v, v gs = 0, f = 1 mhz 275 pf reverse transfer capacitance c rss 200 switching b t d(on) 15 20 turn-on time t r v dd = -6 v, r l = 6 35 50 t d(off) i d -1.0 a, v gen = -4.5 v r g = 6 50 70 ns turn-off time t f 50 75 notes a. for design aid only, not subject to production testing. b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
SI2315BDS vishay siliconix new product document number: 72014 s-21786 ? rev. a, 07-oct-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 200 400 600 800 1000 1200 024681012 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 0.00 0.05 0.10 0.15 0.20 0.25 0.30 024681012 0 2 4 6 8 10 12 0123456 0 1 2 3 4 5 0246810 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 v gs = 4.5 thru 2 v 25 c t c = 125 c c rss c oss c iss v ds = 6 v i d = 3.5 a v gs = 4.5 v i d = 3.5 a v gs = 4.5 v v gs = 2.5 v -55 c 1.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 1.8 v
SI2315BDS vishay siliconix new product www.vishay.com 4 document number: 72014 s-21786 ? rev. a, 07-oct-02 typical characteristics (25 c unless noted) -0.6 -0.4 -0.2 -0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.0 0.1 0.2 0.3 0.4 012345 1 10 20 i d = 3.5 a 0.01 0 1 6 12 2 4 10 600 0.1 0.0 0.2 0.4 0.6 0.8 t j = 150 c threshold voltage variance (v) v gs(th) t j - temperature ( c) power (w) source-drain diode forward voltage on-resistance vs. gate-to-source voltage single pulse power - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s time (sec) 8 10 100 t a = 25 c t j = 25 c safe operating area v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 limited by r ds(on) 0.01 10 t a = 25 c single pulse 10 ms 100 ms dc, 100 s - drain current (a) i d 0.1 1 ms, 100 s 1 s 10 s
SI2315BDS vishay siliconix new product document number: 72014 s-21786 ? rev. a, 07-oct-02 www.vishay.com 5 typical characteristics (25 c unless noted) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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